对基于GaAs失配衬底的新型红外探测材料InN0.01Sb0.99薄膜的远红外反射光谱, 以及制备成光电导器件后的黑体响应和光电流谱进行了测试, 获得了80 K温度下, 响应峰值约为4.4 μm、半高宽约为3.5 μm、截止波长约为5.7 μm的中波宽带响应红外探测原型器件.研究了退火对InN0.01Sb0.99薄膜光电导器件性能的影响, 发现退火能够改善晶体质量, 提高器件的响应能力, 并减小Moss-Burstein效应的影响.

The far-infrared reflectance spectra and the infrared detection characteristics of the new infrared material of InN0.01Sb0.99 thin films were reported. Far-infrared reflectance spectra, blackbody photoresponses and photocurrent spectra of the lattice mismatched InN0.01Sb0.99 film on GaAs substrate have been measured. A prototype wide-band infrared detector whose response peak at 4.4 μm and cut-off wavelength at 5.7 μm with the FWHM of 3.5 μm has been obtained. By investigating the annealing effects on the device performance, it is found that the crystal quality and the response capability are improved and the Moss-Burstein effect is reduced after annealing.