综述了飞秒激光制备掺杂黑硅及其在光电子领域应用中的研究进展。介绍了硅表面微纳结构及黑硅中杂质能带的形成机制，分析了飞秒激光制备黑硅过程中的影响因素，重点阐述了在含硫系元素(硫、硒、碲）的气体、液体、固体膜层环境下，或是采用高能离子注入后，如何利用飞秒激光脉冲实现硫系元素在硅中的超饱和掺杂。评论了飞秒激光制备掺杂黑硅技术中存在的问题并展望黑硅的应用前景。

The research progress of fabrication and application of doping black silicon via femtosecond laser irradiation is reviewed. The formation mechanism of micro-nano structures of silicon surfaces and impurity band in black silicon is introduced, and the influence factors in fabrication process of black silicon is analyzed, elaborating that super saturated doping can be realized by introducing chalcogen dopant (sulfur, selenium, tellurium) in the background gas, liquid, solid thin film environments, or ion-implantation followed by irradiation with femtosecond laser. Some problems demanded to be solved are suggested, and the application prospects of doping black silicon are predicted.