发光学报, 2015, 36 (9): 1018, 网络出版: 2015-10-22
GaAs基高功率半导体激光器单管耦合研究
Coupling Research of High Power Single GaAs Based Semiconductor Laser
摘要
设计了一种高亮度、高功率半导体激光器单管耦合输出模块, 采用波长为975 nm的10 W的GaAs基半导体激光器, 将半导体激光器输出光束耦合进数值孔径0.18、纤芯直径105 μm的光纤中, 获得10 A电流下的输出功率为9.37 W, 耦合效率为94.3%, 亮度为1.64 MW/(cm2·str)。
Abstract
A high brightness and high power fiber coupling laser module with single diode laser (LD) was designed and fabricated. The wavelength of GaAs semiconductor laser is 975 nm and power is 10 W. The numerical aperture of the fiber is 0.18 and the core diameter is 105 μm. When the drive current is 10 A, 9.37 W output power is obtained from the fiber, the coupling efficiency is 94.3%, and the brightness is 1.64 MW/(cm2·str).
王鑫, 王翠鸾, 吴霞, 朱凌妮, 马骁宇, 刘素平. GaAs基高功率半导体激光器单管耦合研究[J]. 发光学报, 2015, 36(9): 1018. WANG Xin, WANG Cui-luan, WU Xia, ZHU Ling-ni, MA Xiao-yu, LIU Su-ping. Coupling Research of High Power Single GaAs Based Semiconductor Laser[J]. Chinese Journal of Luminescence, 2015, 36(9): 1018.