利用射频磁控溅射方法,选取溅射时间为15,25,30和45 min,在蓝宝石衬底上沉积了V2O5薄膜。研究了其他实验参量不变,溅射时间不同对薄膜结构、薄膜厚度、表面形貌、电学及光学性能的影响。实验结果表明,制备出的薄膜为单一组分的V2O5薄膜,其在(001)面有明显的择优取向。随着溅身时间的增加,结晶性能逐渐变强,晶粒尺寸也逐渐变大,而表面粗糙度值会逐渐降低;在晶体结构完整的基础上,随着溅射时间的增加,相变温度和经历的温度范围会逐渐增加,电学突变性能会降低。测试了薄膜在中红外波段的高低温透过率,结果显示: 当膜厚为350 nm,波长为5 μm 时,薄膜的透过率从25 ℃时的81%变为300 ℃的7%,变化幅度可达74%;所有薄膜相变前后透过率的比值均为9~13,表现出了非常突出的光学开关特性。

Vanadium oxide (V2O5) films were deposited on sapphire substrates by Radio Frequency(RF) reactive magnetron sputtering at sputtering time of 15 min,25 min,30 min and 45 min. The film structures,film thicknesses,surface morphology,electrical and optical properties were studied at different sputtering time and other experimental parameters unchanged. The results indicate that the deposited films are polycrystalline V2O5 films on (001) preferred orientation. With the increase of sputtering time,crystallization behaviors become stronger,the grain sizes are larger,and the surface roughness values are reduced gradually. Moreover,phase-transition temperatures and temperature ranges are increased while the electrical mutation properties are reduced. The transmittances of the films (thickness of 350 nm) in a middle-infrared band were detected at high and low temperatures. The results show that the rangeability of transmittances (wavelength of 5 μm) is as high as 74% which ranges from 81% at 25 ℃ to 7% at 300 ℃. All the transmittance ratios before and after phase transitions are between 9—13,showing a very prominent optical-switching property.