为了使红外热像仪能够准确测量微电子器件中微米级发热结构的温度， 并克服由热胀冷缩引起的器件形变问题，提出了一种单温度发射率测量方法。分析了在用传 统的双温度发射率测量方法对微电子器件进行红外检测时热胀冷缩对检测结果的影响。在温度变换过程 中，器件的形变效应会严重影响温度测量结果。提出了一种针对微电子器件显微红外测试 的单温度发射率测量方法。该方法只需将被测件保持在一个固定温度下即可对发射率进行测 量。理论分析结果表明，该方法与双温度法在最终的测量结果上是等效的。单温度发射率测量 方法可以有效避免微电子器件的形变影响，因而可保证温度测量结果的准确性和可靠性。

To let an infrared thermal imager measure the temperature of micrometer-level heating structures in micro-electronic devices accurately and overcome the problem of device deformation due to expansion and contraction, a single-temperature emissivity measurement method is proposed. The influence of expansion and contraction on the detection result when a traditional dual-temperature emissivity measurement method is used to detect micro-electronic devices is analyzed. In the process of temperature transformation, the deformation effect of the device may affect the measurement result seriously. The proposed single-temperature emissivity measurement method is designed for the microscopic infrared test of micro-electronic devices. It can measure the emissivity of a device as long as it is kept at a fixed temperature. The theoretical analysis result shows that the single-temperature method and the dual-temperature are equivalent in the final measurement results. However, the single-temperature method can avoid the deformation of devices. So, the accuracy and reliability of its measurement result is ensured.