首页 > 论文 > 光学学报 > 35卷 > 12期(pp:1204002--1)

In0.53Ga0.47As 光电探测器量子效率的理论仿真分析

Theoretical Simulation Analysis the Quantum Efficiency of In0.53Ga0.47As Photodetectors

  • 摘要
  • 论文信息
  • 参考文献
  • 被引情况
  • PDF全文
分享:

摘要

研究了材料参数对In0.53Ga0.47As光电探测器量子效率的影响。分析发现量子效率的变化主要取决于入射光的方向,P 区与N 区载流子浓度以及各区的表面复合速度和厚度。当光从P 区入射时,P 区载流子的表面复合速度、载流子浓度以及厚度对量子效率均产生极大的影响。N 区材料参数对量子效率也有轻微的影响。在高载流子浓度范围内(n> 10cm17 cm-3 ),表面复合速度和厚度是主要影响因素。当光从N 区入射时,载流子浓度n<10cm17 cm-3 时,N 区表面复合速度为影响量子效率的主要因素;而当载流子浓度n>10cm16 cm-3 时,对量子效率产生影响的主要因素为材料厚度。

Abstract

Influence of material parameters on quantum efficiency of In0.53Ga0.47As photodetector is presented. The results show that the quantum efficiency mainly depends on the direction of incident light, the carrier concentrations of P-region and N-region, and the surface recombination velocities and the thickness of each region. When light is injected from P-side, the surface recombination velocity, carrier concentration and thickness of P-region have significant impact on the quantum efficiency. The material parameters of N-region have slight impact on quantum efficiency. Under condition of high carrier concentration (n>1017 cm-3), the surface recombination velocity and thickness are major factors. When light is injected from N-side, the surface recombination velocity of N-region is the major factor of quantum efficiency, if the carrier concentration is less than 1017 cm-3; the material thickness is the major factor of quantum efficiency, if the carrier concentration is more than 10cm16 cm-3.

Newport宣传-MKS新实验室计划
补充资料

中图分类号:TN29

DOI:10.3788/aos201535.1204002

所属栏目:探测器

基金项目:吉林省重大科技成果转化项目(20130303017GX)、吉林省重点科学技术研究项目(20140204028GX)

收稿日期:2015-05-12

修改稿日期:2015-07-16

网络出版日期:--

作者单位    点击查看

李丹妮:长春理工大学, 吉林 长春 130022
徐英添:长春理工大学, 吉林 长春 130022
徐莉:长春理工大学, 吉林 长春 130022
邹永刚:长春理工大学, 吉林 长春 130022
张贺:长春理工大学, 吉林 长春 130022
李洋:长春理工大学, 吉林 长春 130022
赵鑫:长春理工大学, 吉林 长春 130022
马晓辉:长春理工大学, 吉林 长春 130022
侯林宝:长春理工大学, 吉林 长春 130022

联系人作者:李丹妮(8669979@qq.com)

备注:李丹妮(1982—),女,硕士,助理研究员,主要从事光电子技术方面的研究。

【1】Jin Lufan, Zhang Yating, Wang Haiyan, et al.. Acceleration aging of InGaAs PIN photoelectric detectors[J]. Chinese J Lasers, 2014, 41 (10): 1008002.
金露凡, 张雅婷, 王海艳, 等. InGaAs PIN 光电探测器的加速老化研究[J]. 中国激光, 2014, 41(10): 1008002.

【2】Liu Yang, Li Lin, Qiao Zhongliang, et al.. Optical characteristics of 1.06 μm InGaAs/GaAs quantum well grown by MOCVD [J]. Chinese J Lasers, 2014, 41(11): 1106001.
刘洋, 李林, 乔忠良, 等. MOCVD 生长1.06μm 波段InGaAs/GaAs单量子阱材料的发光特性研究[J]. 中国激光, 2014, 41(11): 1106001.

【3】Xu Yingtian, Li Ying, Long Beihong, et al.. Studying the influence of material parameters on quantum efficiency of In0.53Ga0.47As photovoltaic detector[J]. Optoelectronics and Advanced Materials – Rapid Communications, 2012, 6(11-12): 1009-1014.

【4】Yuan Huibo, Li Lin, Qiao Zhongliang, et al.. Optical characteristics of GaAsP/GaInP quantum well grown by metal-organic chemical vapor deposition[J]. Chinese J Lasers, 2014, 41(5):0506002.
苑汇帛, 李林, 乔忠良, 等. MOCVD 生长GaAsP/GaInP 量子阱材料的发光特性[J]. 中国激光, 2014, 41(5): 0506002.

【5】Duan Xiaofeng, Huang Yongqing, Ren Xiaomin, et al.. High-efficiency InGaAs/InP photodetector incorporating SOI-based concentric circular subwavelength gratings[J]. IEEE Photonics Technology Letters, 2012, 24(10): 863-865.

【6】Liu Shaoqing, Han Qin, Zhu Bin, et al.. Tunable metamorphic resonant cavity enhanced InGaAs photodetectors grown on GaAs substrates [J]. Chinese Physics Letters, 2012, 29(3): 38501.

【7】Zhao Fang, Zhang Yunyan, Song Jingjing, et al.. High internal quantum efficiency blue light-emitting diodes with triangular shaped InGaN/ GaN multiple quantum wells [J]. Chinese Journal of Luminescence, 2013, 34(1): 66-72.
赵芳, 张运炎, 宋晶晶, 等. 具有三角形InGaN/GaN 多量子阱的高内量子效率的蓝光LED[J]. 发光学报, 2013, 34(1): 66-72.

【8】Li Guobin, Chen Changshui, Liu Songhao. The effects of In content on the LED photoelectric performance InGaN/GaN [J]. Chinese Journal of Luminescence, 2013, 34(9): 1233-1239.
李国斌, 陈长水, 刘颂豪. In含量对InGaN/GaN LED 光电性能的影响[J]. 发光学报, 2013, 34(9):1233-1239.

【9】Zhao Xu, Miao Guoqing, Zhang Zhiwei, et al.. Structural design and optimization of novel composite cap extended wavelength InGaAs infrared detector[J]. Chinese Journal Luminescence, 2015, 36(1):75-79.
赵旭, 缪国庆, 张志伟, 等. 新型复合盖层延伸波长InGaAs红外探测器结构优化设计[J]. 发光学报, 2015, 36(1):75-79.

【10】Wang Hongpei, Wang Guanglong, Qiu Peng, et al.. Design and characteristics analysis of single photon detector based on quantum-dot field effect transistor [J]. Chinese J Lasers, 2013, 40(1): 0118001.
王红培, 王广龙, 邱鹏, 等. 量子点场效应晶体管单光子探测器的设计与特性分析[J]. 中国激光, 2013, 40(1): 0118001.

【11】Lian Ruikai, Li Lin, Fan Yaming, et al.. Effects of AlN buffer layer thickness and Al pre-treatment on properties of GaN/Si(111) epilayer [J]. Chinese J Lasers, 2013, 40(1): 0106001.
廉瑞凯, 李林, 范亚明, 等. 预辅Al及AlN 缓冲层厚度对GaN/Si(111)材料特性的影响[J]. 中国激光, 2013, 40(1): 0106001.

引用该论文

Li Danni,Xu Yingtian,Xu Li,Zou Yonggang,Zhang He,Li Yang,Zhao Xin,Ma Xiaohui,Hou Linbao. Theoretical Simulation Analysis the Quantum Efficiency of In0.53Ga0.47As Photodetectors[J]. Acta Optica Sinica, 2015, 35(12): 1204002

李丹妮,徐英添,徐莉,邹永刚,张贺,李洋,赵鑫,马晓辉,侯林宝. In0.53Ga0.47As 光电探测器量子效率的理论仿真分析[J]. 光学学报, 2015, 35(12): 1204002

被引情况

【1】张鹏,宫二栋,彭辉,田春林. 基于Photo-CELIV测量载流子迁移率实验系统. 激光与光电子学进展, 2016, 53(10): 101407--1

您的浏览器不支持PDF插件,请使用最新的(Chrome/Fire Fox等)浏览器.或者您还可以点击此处下载该论文PDF