研究了材料参数对In_0.53Ga_0.47As光电探测器量子效率的影响。分析发现量子效率的变化主要取决于入射光的方向，P 区与N 区载流子浓度以及各区的表面复合速度和厚度。当光从P 区入射时，P 区载流子的表面复合速度、载流子浓度以及厚度对量子效率均产生极大的影响。N 区材料参数对量子效率也有轻微的影响。在高载流子浓度范围内(n> 10cm¹⁷ cm^-3 )，表面复合速度和厚度是主要影响因素。当光从N 区入射时，载流子浓度n<10cm¹⁷ cm^-3 时，N 区表面复合速度为影响量子效率的主要因素；而当载流子浓度n>10cm¹⁶ cm^-3 时，对量子效率产生影响的主要因素为材料厚度。

Influence of material parameters on quantum efficiency of In_0.53Ga_0.47As photodetector is presented. The results show that the quantum efficiency mainly depends on the direction of incident light, the carrier concentrations of P-region and N-region, and the surface recombination velocities and the thickness of each region. When light is injected from P-side, the surface recombination velocity, carrier concentration and thickness of P-region have significant impact on the quantum efficiency. The material parameters of N-region have slight impact on quantum efficiency. Under condition of high carrier concentration (n>10¹⁷ cm^-3), the surface recombination velocity and thickness are major factors. When light is injected from N-side, the surface recombination velocity of N-region is the major factor of quantum efficiency, if the carrier concentration is less than 10¹⁷ cm^-3; the material thickness is the major factor of quantum efficiency, if the carrier concentration is more than 10cm¹⁶ cm^-3.