通过MOCVD和CVD生长技术，利用高Al组分AlGaN和单层石墨烯材料进行纵向集成，成功制备了日盲紫外-近红外双色探测器。在工作温度为室温、调制频率为209 Hz以及工作电压分别为10 V和5 V的工作条件下，所制备的双色探测器在紫外波段263 nm处的响应度为5.9 mA/W，在近红外波段1.15 μm处的响应度为0.67 mA/W，并且探测器的响应度均随着工作电压的增加而增大。

Employing MOCVD and CVD growth technique,the solar blind ultraviolet-near infrared dual-color detectors were successfully fabricated based on AlGaN with high Al component and single-layer graphene materials by vertical integration. The typical response of the dual color detectors in the ultraviolet band at 263 nm is 5.9 mA/W,and that in the near infrared band at 1.15 μm is 0.67 mA/W,under the operating condition of room temperature,the modulation frequency of 209 Hz,and the operating voltage of 10 V and 5 V,respectively. Besides,the responses of the two types of detectors will increase with the increase of operating voltage.