提出了1 种通用的三维电光器件仿真方法。该方法将有限元电场分析和电光效应耦合波理论相结合，通过求解电光器件的琼斯矩阵，计算了任意光传播方向和任意电场分布下的电光调制特性。以横向调制的Bi₄Ge₃O₁₂(BGO)晶体光学电压传感器(OVS)为例，对该方法进行了详细说明。讨论了Bi₄Ge₃O₁₂晶体内的非均匀电场及光路偏移对测量精度的影响，给出了在不同的精度等级条件下的最大允许光路偏移。该方法为光学电压传感器和其他电光器件的设计和性能评估提供了参考依据。

A universal simulation method for 3- dimensional electro- optic device is proposed. This method combines the electro-optic wave coupling theory with finite-element method for electric field analysis. By solving Jones- matrix of electro- optic device, electro- optic modulation for arbitrary light propagating direction and arbitrary electric field direction can be computed. This method is elaborated by taking the transverse-modulated Bi₄Ge₃O₁₂(BGO) optical voltage sensor(OVS) for instance. The effect of inhomogeneous electric field and light beam shift on measurement accuracy is discussed. The maximum permitted beam shift for different accuracy grade is given. The method provides references for designing and evaluating optical voltage sensor and other electro-optic devices.