系统研究了I类组分量子阱结构材料GaAs/AlGaAs的结构设计、材料表征及光学性能。利用分子束外延(MBE)技术生长量子阱材料,原子力显微镜(AFM)测量结果表明样品表面粗糙度达到10-1nm数量级。X射线双晶衍射测试结果显示材料具备良好的生长质量及晶格完整性。室温光致发光谱探测出量子阱导带电子与价带轻重空穴的复合发光,及施主受主(DA)能级间距与GaAs禁带宽度。综合分析结果表明用MBE方法制备实现了与设计结构高度相符的GaAs/Al0.27Ga0.73As量子阱样品,为后期器件设计的精确实现提供了理论依据。

The structure design,material characterization and optical properties of Ikind GaAs/AlGaAs quantum well material were investigated. The quantum well material was grown by molecular beam epitaxy(MBE),and atomic force microscope (AFM) testing shows the magnitude of roughness reaches up to 10-1nm. Xray double crystal diffraction testing result shows it owns high growing quality and structure integrity. Room photoluminescence(PL) detects the bandgap of GaAs and the energy level spacing of donoracceptor(DA). The results show the structure parameters of specimen grown by MBE are consistent with the design values so that accurate photoelectronic devices can be achieved.