报道了两种Nd:GdVO₄主动调Q 被动锁模激光器，利用自锁模(KLM)和半导体可饱和吸收耦合输出镜(SOC)锁模两种不同的被动锁模方式，分别与电光(EO)主动调Q 元件相结合，获得了稳定的调Q 锁模脉冲。主动调Q 自锁模脉冲调Q 包络重复频率为3 kHz，包络脉宽约1.2 μs，包络下锁模脉冲重复频率为159 MHz，锁模脉宽约963 ps。主动调Q SOC 锁模脉冲调Q 包络重复频率为10 kHz，包络脉宽约300 ns，包络下锁模脉冲重复频率为159 MHz，锁模脉宽约491 ps。分别提出了自锁模等效快饱和吸收体损耗和SOC 的非线性损耗表达式，并给出了主动调Q 自锁模激光器和主动调Q SOC 锁模激光器的速率方程组。对比了两种主动调Q 被动锁模激光器的输出特性，结合速率方程，提出了主动调Q SOC 锁模受到两种锁模方式的叠加作用。

Two kinds of LD pumped Nd: GdVO₄ crystal actively Q- switched passively mode- locked lasers are reported. Using self-mode-locking and semiconductor saturable absorber output coupler mode-locking respectively combined with electro-optic actively Q-switch, stably Q-switched mode-locked laser is obtained. The actively Qswitched self-mode-locked laser has a Q-switched envelope repetition rate of 3 kHz and a pulse duration of about 1.2 μs, while the self-mode-locked pulses within the Q-switched envelope have a repetition rate of 159 MHz and an estimated pulse duration of 963 ps. The actively Q-switched semiconductor saturable absorber output couple mode-locked laser has a Q-switched envelope repetition rate of 10 kHz and a pulse duration of about 300 ns, while the repetition rate of mode-locked pulses within the Q-switched envelope is 159 MHz and the pulse duration is about 491 ps. The mathematical expressions of the nonlinear loss of self-mode-locking equivalent fast saturable absorber and semiconductor saturable absorber output coupler are presented respectively. Using the fluctuation mechanism, the rate equations of electro- optic actively Q- switched self- mode- locked laser and electro- optic actively Qswitched semiconductor saturable absorber output couple mode-locked laser are presented. Through the comparison of the output characteristics and the rate equations for these two Q-switched mode-locked lasers, the superposition of the two modulation effects is analysed.