采用液相外延（LPE）生长的中波HgCdTe 薄膜，基于B 离子注入n-on-p 平面结技术，制备了LBIC 测试结构和I-V 测试芯片并进行了相应的测试和分析。LBIC 测试结果表明，HgCdTe pn 结实际结区尺寸扩展4～5 μm，这主要与光刻、B 离子注入以及注入后低温退火等器件工艺有关。二极管器件C-V 和I-V 特性研究表明，所制备的HgCdTe pn 结不是突变结也不是线性缓变结。中波HgCdTe 二极管器件最高动态阻抗大于30 GΩ，器件优值R0A 高达1.21×10⁵ Ωcm²，表现出较好的器件性能。

Based on LPE MW HgCdTe growth technique and B ion implant n-on-p planar junction technology, the LBIC test structure and I-V test chip are prepared and measured. LBIC test results show that the actual size of HgCdTe pn junction extends 4-5 μm, which is mainly related to the device process of the lithography, B ion implant and low temperature annealing followed implantation. Studies on the C-V and I-V characteristics of diode point out that HgCdTe pn junction is neither abrupt junction nor linearly graded junction. The maximum dynamic resistance of photodiode exceeds 30 GΩ, and the R0A value of device reaches 1.21×10⁵ Ωcm², which shows good device performance.