红外技术, 2015, 37 (10): 864, 网络出版: 2015-12-21
碲镉汞红外焦平面器件表面复合膜层钝化技术
Passivation Technology of Composite Film on the HgCdTe IRFPA
摘要
碲镉汞( Hg1-xCdxTe)红外器件的制备过程中, 表面钝化工艺对于器件性能具有很大影响。通过实验, 研究了溅射功率、靶基距、基片摆动角度等工艺参数对碲镉汞衬底上制备的 CdTe/ZnS复合钝化膜层质量的影响。实验结果表明, 当 CdTe与 ZnS溅射靶功率分布为 140 W与 350 W, 靶基距为 40cm, 基片摆动角度为 ±30°时, 中心 2英寸区域膜层非均匀性达到±3%以内, 同时钝化膜层表面粗糙度与附着能力获得了较大改善。
Abstract
In the fabrication of the MCT infrared detectors, the HgCdTe passivation process has a profound effect on its performance parameters. In this paper, lots of influencing factors were studied experimentally, such as the sputtering power, distance between target and substrate, movement of substrate, to improve the quality of CdTe/ZnS composite passivation film on the MCT substrate. The results indicated that the film thickness uniformity was better than within ±3% in the center of 2 inch area when the sputtering power of CdTe and ZnS were 140W and 350W, the target spacing was 40cm and the swing angle of the substrate was ±30°, meanwhile, the surface roughness and adhesion ability of the passivation film were improved.
韩福忠, 耿松, 史琪, 袁授章, 杨伟声, 蒋俊, 汤金春. 碲镉汞红外焦平面器件表面复合膜层钝化技术[J]. 红外技术, 2015, 37(10): 864. HAN Fu-zhong, GENG Song, Shi Qi, YUAN Shou-zhang, YANG Wei-sheng, JIANG Jun, TANG Jin-chun. Passivation Technology of Composite Film on the HgCdTe IRFPA[J]. Infrared Technology, 2015, 37(10): 864.