研制出一种应用于单铟柱结构的长/中波双色叠层碲镉汞 640×512焦平面 CMOS读出电路(ROIC)。根据单铟柱结构的双色叠层碲镉汞探测器实际应用需求, 读出电路设计了单色长波积分/读出、单色中波积分/读出、长/中波双色信号顺序积分/读出、长/中波双色信号分时多路积分(TDMI)/读出等四种工作模式可选功能。输入级单元电路分别采用长/中波信号注入管、复位管、积分电容及累积电容, 并分别采用读出开关缓冲输出。为提高读出电路的适应性, 各色信号通路分别设计了抗晕管以提高探测器的抗晕能力; 读出电路采用快照(Snapshot)积分模式, 单色积分时具有先积分后读出(ITR)/边积分边读出(IWR)可选功能; 当读出电路工作在单色或双色信号顺序模式时, 各色积分时间可调; 此外读出电路具有多种规格及任意开窗模式。该读出电路采用 0.35.m 2P4M标准 CMOS工艺, 工作电压 3.3 V。读出电路具有全芯片电注入测试功能, 测试结果表明, 在 77 K条件下, 读出电路的四种积分/读出模式工作正常, 单色信号输出摆幅达 2.3 V, 功耗典型值为 65 mW。

The 640×512 ROIC used for one-indium-bump dual band MCT stacked focal plane array was developed. Four kinds of operation, LWIR only integration, MWIR only operation, DWIR Sequential integration and DWIR time-division multiplexed integration, were designed for one-indium-bump dual band MCT stacked focal plane array. The pixel input cell circuit was designed with LW integration DI circuit and MW integration DI circuit, the LW signal and MW signal were transported separately. To improve adaptability of the dual band detector assembly, the anti-booming operation had been achieved. The ROIC supports dual band signal Snapshot module, integration then readout (ITR) or integration while readout (IWR) operation separately, and selectable window readout modes. The 640×512 dual band focal plane ROIC was fabricated in 0.35.m DPFM CMOS process. The test result shows that the ROIC has good performance. The dynamic range of the ROIC is 2.3 V, the time-division multiplexed integration operated well, and the total power dissipation is about 65 mW.