通过采用高效磷光体系材料和顶发射有机发光结构, 配合自有的 SVGA060全数字信号电路系统架构 CMOS硅基驱动电路, 获得了发光峰位于 535 nm的高亮度单色绿光、 0.6英寸、800×600分辨率 OLED微显示器件, 最大亮度可达 20000 cd/m2。其起亮电压为 2.6 V, 亮度从 20 cd/m2到 20000 cd/m2的驱动电压摆幅为 2.7 V, 最大电流效率为 24.43 cd/A。电流密度为 20 mA/cm2时, 色坐标 CIEX＝0.286、 CIEY＝0.665。该器件在 1000 cd/m2和 500 cd/m2亮度下的半衰期为 42559 h和 186208 h。

A high brightness, 0.6 inch, 800×600, mono green OLED micro-display, which based on phosphorescent materials, high efficient top-emitting structure and SVGA060 si-base CMOS backplane with full digital system driver circuit have been fabricated. The voltage of device start working is only 2.6 V, and the voltage swing as low as 2.7 V from 20 cd/m2 to 20000 cd/m2. When current density is 20 mA/cm2, the green emission with peak at 535 nm and CIE coordinates X＝0.286, Y＝0.665. The maximun current efficiency is 24.43 cd/A. The optimized devices have a half-life of 42559 h@1000 cd.m2 and 186208 h@500 cd.m2.