Photonics Research, 2015, 3 (6): 06000289, Published Online: Jan. 6, 2016  

Investigation of hybrid microring lasers adhesively bonded on silicon wafer Download: 1206次

Author Affiliations
The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China
Abstract
Thermal characteristics are numerically investigated for the hybrid AlGaInAs/InP on silicon microring lasers with different ring radii and widths. Low threshold current and low active region temperature rise are expected for a microring laser with a narrow ring width. Based on the thermal analysis and the 3D simulation for mode characteristics, a hybrid AlGaInAs/InP on silicon microring lasers with an inner n-electrode laterally confined by the p-electrode metallic layer is fabricated using an adhesive bonding technique. A threshold current of 4 mA is achieved for a hybrid microring laser with a radius of 20 μm and a ring width of 3.5 μm at 12°C, and the corresponding threshold current density is as low as 1 kA∕cm2. The influence of the location of silicon waveguide on output performance is studied experimentally for improving the output coupling efficiency. Furthermore, continuous-wave electrically injected lasing up to 55°C is realized for a hybrid microring laser with a radius of 30 μm and a ring width of 3 μm.China under grant 2012AA012202 and NSFC/RGC joint projectunder grant 61431166003. The authors thank Professor Andrew W. Poon and the Nanoelectronics FabricationFacility (NFF) of HKUST for support in the fabrication ofsilicon waveguides.

Shao-Shuai Sui, Ming-Ying Tang, Yue-De Yang, Jin-Long Xiao, Yun Du, Yong-Zhen Huang. Investigation of hybrid microring lasers adhesively bonded on silicon wafer[J]. Photonics Research, 2015, 3(6): 06000289.

引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!