红外与毫米波学报, 2015, 34 (6): 0658, 网络出版: 2016-01-19
钛掺杂对Ge2Sb2Te5薄膜相变特性的改善
Improvement of phase change behavior in titanium-doped Ge2Sb2Te5 films
钛掺杂Ge2Sb2Te5薄 相变特性 热稳定性 数据保持能力 Ti-doped Ge2Sb2Te5 phase-change behavior thermal stability data retention performance
摘要
利用椭偏光谱术与XRD对钛掺杂Ge2Sb2Te5薄膜中钛元素对体系的光学性质及其微结构的影响进行了实验研究.进而对该薄膜进行变温阻抗实验表明,钛掺杂Ge2Sb2Te5薄膜与未掺杂的薄膜相比具有更好的热稳定性.基于对薄膜样品的数据保持能力测试的实验数据,经阿伦纽斯外推处理可知,钛掺杂Ge2Sb2Te5薄膜样品的10年数据保持温度要高于未掺杂Ge2Sb2Te5薄膜样品.本文的实验结果均证实,钛掺杂Ge2Sb2Te5薄膜更适合应用于相变随机存取存储器中.
Abstract
The influence of Ti dopant in the titanium-doped Ge2Sb2Te5 film upon its optical and structural characteristics has been investigated by spectroscopic ellipsometry and x-ray diffraction. Temperature-dependent resistance tests have further revealed that Ti-doped Ge2Sb2Te5 films have better thermal stability than undoped one. Based on the Arrhenius extrapolation results from data retention tests, the endurance temperature corresponding to 10-year data retention of a Ti-doped Ge2Sb2Te5 cell is higher than that of a common Ge2Sb2Te5 cell without dopant. All these experimental results have confirmed that the Ti-doped Ge2Sb2Te5 films are more suitable for the application in phase-change random access memory.
张颖, 魏慎金, 易歆雨, 程帅, 陈坤, 朱焕锋, 李晶, 吕磊. 钛掺杂对Ge2Sb2Te5薄膜相变特性的改善[J]. 红外与毫米波学报, 2015, 34(6): 0658. ZHANG Ying, WEI Shen-Jin, YI Xin-Yu, CHENG Shuai, CHEN Kun, ZHU Huan-Feng, LI Jing, LV Lei. Improvement of phase change behavior in titanium-doped Ge2Sb2Te5 films[J]. Journal of Infrared and Millimeter Waves, 2015, 34(6): 0658.