基于损伤特性、应力特性较好的电子束蒸发技术，制备了Ta2O5/SiO2和HfO2/SiO2两种带宽不同、电场分布不同的啁啾镜，利用中心波长为1 030 nm，脉宽为350 fs的激光脉冲对两种样品进行了损伤测试。实验结果表明：材料特性及电场分布是影响啁啾镜损伤阈值的主要因素，通过膜系设计降低电场分布可以制备带宽更宽、损伤阈值与HfO2/SiO2啁啾镜相近的Ta2O5/SiO2啁啾镜。利用基于导带电子数密度的理论模型对此现象进行了解释，同时对啁啾镜的损伤形貌进行了观测、分析。

The HfO2/SiO2 and Ta2O5/SiO2 chirped mirrors with different electric field distribution were fabricated by electron beam evaporation with good damage characteristics and stress features. The laser-induced damage test of samples was performed by laser pulses with duration 350fs, center wavelength 1 030 nm. The results show that the material characteristics and electric field distribution are the key factors which can influence the damage threshold. Ta2O5/SiO2 chirped mirror, which has much wider GDD bandwidth and has the same damage threshold as HfO2/SiO2 chirped mirror can be fabricated by reducing the peak intensity of field in the film stack. This phenomenon was illustrated by the theoretical model of conduction band electron density while the breakdown mechanism of chirped mirrors was explained and damage morphologies of samples were analyzed.