利用LASTIP软件理论分析了有源区量子阱数目对不同组分的InGaAsSb/AlGaAsSb 2 μm半导体激光器能带、电子与空穴浓度分布以及辐射复合率等性能参数的影响。研究表明：量子阱的个数是影响激光器件性能的关键参数，需要综合分析和优化。量子阱数太少时，量子阱对电子束缚能力弱，电子在p层中泄漏明显，辐射复合率低。量子阱数过多时，载流子在阱内分配不均匀，p型层中电子浓度升高，器件内损耗加大，辐射复合率下降。结合对外延材料质量的分析，InGaAsSb/AlGaAsSb 半导体激光器有源区最优量子阱数目为2~3。该研究结果可合理地解释已有实验报道，并为2 μm半导体激光器结构设计提供理论依据。

In order to find the appropriate quantum well number, the electrical and optical characteristics of InGaAsSb/AlGaAsSb laser diode with various QW numbers and contents were investigated using LASTIP simulation program. In the case of single QW, the total number of carriers injected into the QW will be small and the radiative recombination will be poor. When the number of QWs was increased into larger than 4, however, the optical performance started to degrade because of the uneven distribution of carrier concentration and the higher electron concentration in the p-side, which increased in the internal loss in the active region. Taking into account of the effect of QWs number on the epitaxy layers quality, the optimized number of InGaAsSb/AlGaAsSb 2 μm LDs was 2-3. The obtained results are beneficial to the design of the high performance 2 μm Sb-containing LDs.