线残像是液晶显示不良的一种表现，对在Cell中短时间内判断液晶线残像的强弱进行了研究。本文使用了4种介电各向异性相同的液晶，对这4款混晶所制成的TFT-LCD屏进行了线残像水平测定，系统分析了混晶的组分与线残像的关系，并使用了一种通过加直流电压测试V-T曲线的漂移来判断液晶残像强弱的方法，对4款混晶做了V-T曲线漂移实验。组分分析表明，介电各向异性相同的情况下，液晶中-CF2O-类单体和-COO-类单体的使用会导致线残像的发生。V-T漂移实验结果表明，Vth变化率小于5%时，液晶显示线残像轻微，Vth变化率大于10%时，线残像严重。这种方法可以在Cell中进行，并且使测试时间明显缩短，这对提高液晶的研发效率具有指导意义。

Image sticking is a display defect of TFT-LCD.The problem is to judge the level of line image sticking in cell in a short time.Generally, image sticking is related to dielectric anisotropy of liquid crystal.In this paper, 4 LC mixtures which have the same dielectric anisotropy are used for image sticking research.The line image sticking level of TFT-LCD using the 4 kinds of LC mixtures are evaluated.The relationship between LC mixture composition and line image sticking is analyzed. The use of -CF2O- and -COO- type of single can lead to line image sticking.In this paper, a method of measuring the strength of image sticking by testing the drift of V-T curve in DC voltage is explored.The principle of this method is analyzed.The experimental shows that when the rate of changeis less than 5%, line image sticking is slight, when larger than 10%, line image sticking is serious.This method can be carried out in Cell, and the test time was significantly reduced, which has the significance for improving the efficiency of the liquid crystal developing.