半导体光电, 2016, 37 (1): 30, 网络出版: 2016-03-22  

石墨烯-GaN肖特基紫外探测器

Graphene-GaN Schottky Ultraviolet Detector
作者单位
1 北京工业大学 光电子技术省部共建教育部重点实验室, 北京100124
2 中国科学院半导体研究所, 北京100083
摘要
报道了使用石墨烯作为阳极材料的GaN肖特基型紫外探测器。介绍了光敏面为1mm×1mm的新型肖特基紫外探测器的制备过程。并对器件进行了响应光谱、I-V特性测试。器件的响应光谱较为平坦, 峰值响应度为0.175A/W; 通过对石墨烯进行化学修饰, 使峰值响应度增加到0.23A/W。并根据热电子发射理论, 计算出了器件掺杂前后的肖特基势垒高度分别为0.477eV和0.882eV, 验证了器件性能的提高主要原因是石墨烯功函数的增加。
Abstract
A kind of GaN Schottky ultraviolet detector with graphene as the anode was reported, and the fabrication of the devices with a photosurface as large as 1mm×1mm was introduced. The I-V characteristics and response spectrum of the devices were measured. The response spectrum is flat and the peak value is 0.175A/W. Then it was improved to 0.23A/W by making graphene chemical doping. Based on the thermionic emission theory, Schottky barrier height was calculated to be 0.477eV and 0.882eV before and after chemical doping, which abundantly proves that the performance improvement is mainly due to the increase of work function of graphene.

许坤, 徐晨, 郭旺, 解意洋. 石墨烯-GaN肖特基紫外探测器[J]. 半导体光电, 2016, 37(1): 30. XU Kun, XU Chen, GUO Wang, XIE Yiyang. Graphene-GaN Schottky Ultraviolet Detector[J]. Semiconductor Optoelectronics, 2016, 37(1): 30.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!