半导体光电, 2016, 37 (1): 50, 网络出版: 2016-03-22
Sb2S3/TiO2纳米管异质结阵列的制备和光电性能
Preparation and Photoelectrical Properties of Sb2S3/TiO2 Nanotube Heterojunction Arrays
TiO2纳米管阵列 异质结 表面光电压谱 相位谱 光电性能 Sb2S3 Sb2S3 TiO2 nanotube arrays heterojunction surface photovoltage spectrum phase spectrum photoelectrical property
摘要
结合水热法和阳极氧化法合成了Sb2S3/TiO2纳米管异质结阵列, 采用场发射扫描电子显微镜、X射线衍射谱表征了异质结阵列的形貌和晶体结构。暗态下的电流-电压曲线表明Sb2S3/TiO2纳米管异质结阵列具有整流效应。相比于纯的TiO2纳米管阵列, Sb2S3/TiO2纳米管异质结阵列的光电性能有了显著的提升:在AM 1.5标准光强作用下, 光电转换效率从0.07%增长到0.40%, 表面光电压响应范围从紫外光区拓宽至可见光区。结合表面光电压谱和相位谱, 分析了Sb2S3/TiO2纳米管异质结阵列中光生载流子的分离和传输性能。
Abstract
Sb2S3/TiO2 nanotube heterojunction arrays were prepared by combining anodization with hydrothermal method. The crystal structure and surface morphology of heterojunction arrays were characterized by field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD). The dark current-voltage curve of Sb2S3/TiO2 nanotube heterojunction arrays reveals an obvious rectifying behavior. Compared with pure TiO2, improved photoelectrical properties of Sb2S3/TiO2 nanotube heterojunction arrays are obtained. The power conversion efficiency increases from 0.07% to 0.40% under AM1.5 (100mW/cm2). The surface photovoltage response range is extended from 300 to 730nm. The separation and charge transfer process of photo-generated carriers is analyzed by the surface photovoltage and phase spectrums.
席金芳, 鲁双伟, 杨峰, 蔡芳共, 马文利, 邹龙生, 谢思思, 张勇, 阚香, 程翠华, 赵勇. Sb2S3/TiO2纳米管异质结阵列的制备和光电性能[J]. 半导体光电, 2016, 37(1): 50. XI Jinfang, LU Shuangwei, YANG Feng, CAI Fanggong, MA Wenli, ZOU Longsheng, XIE Sisi, ZHANG Yong, KAN Xiang, CHENG Cuihua, ZHAO Yong. Preparation and Photoelectrical Properties of Sb2S3/TiO2 Nanotube Heterojunction Arrays[J]. Semiconductor Optoelectronics, 2016, 37(1): 50.