介绍了一种利用横向双扩散金属氧化物半导体(LDMOS)作为开关器件驱动激光半导体的设计方法。通过对半导体激光器驱动电路原理的分析，并结合PSPICE建立射频功率晶体管的电路模型，经过理论分析和计算从而获得更优化的驱动电路；采用高速电流反馈型运算放大器构成电流串联负反馈电路从而得到稳定的输出电流，有效地提高了窄脉冲信号的转换速率和频响特性。实验结果表明，半导体激光器输出电流脉宽20 ns-CW可调，上升和下降时间小于10 ns，幅度最高可达2 A，重复频率为0~10 MHz。实验结果验证了设计思路的可行性，进一步提高了半导体激光器的输出指标。

In this paper a research about adjustable narrow-width pulsed laser diode driver was introduced which is based on the Lateral Double-diffused MOS(LDMOS). Through the analysis of the semiconductor laser driving circuit theory, circuit-level model of RF power transistor was established by using PSPICE simulation software to gain more optimized drive circuit with theoretical calculations. High-speed current-feedback operational amplifier effectively improved the slew rate and the narrow pulse signal frequency response characteristic. The experimental results show that the laser diode driver can generate 2 A current and the pulse width is adjustable from 20 ns to CW, the rise time and fall time are below 10 ns, the pulse repetition frequency is adjustable from 0 to 10 MHz, which demonstrates the feasibility of the design idea to further improve the output performance of semiconductor laser.