概括了国外InAlSb红外探测器的研究现状、材料性质以及发展趋势，并介 绍了几种不同的器件结构及其性能情况。InAlSb/InSb红外探测器的设计目标主要是通过抑制暗电流来 提高探测器的工作温度。近年来，基于传统InSb探测器的成熟工艺与技术，InAlSb探测器的性 能得到了不断提升。该研究对红外制导、预警等**领域具有重要的研究意义和应用价值。

The current status, material property and development trend of InAlSb infrared detectors of foreign countries are summarized. Several different device structures and their performance are presented. The main design objective of InAlSb/InSb infrared detectors is to elevate the operating temperature by reducing the dark current. In recent years, the performance of InAlSb infrared detectors is improved continuously on the basis of the mature process and technology of traditional InSb detectors. This research is of significance and application value to the fields of infrared guidance, early warning, etc.