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AlGaN紫外探测器p电极的Ni/Au/Ni/Au欧姆接触结构研究

Research on Ni/Au/Ni/Au Ohmic Contact Structures of p-AlGaN Ultraviolet Detector

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摘要

研究了AlGaN半导体p电极的Ni/Au/Ni/Au接触结构的性能和组织结构。退火 前,p电极接触具有明显的整流特性。经空气中550℃/3 min一 次退火和N2 气氛中750℃/30 s二 次退火后,电极呈现出了良好的欧姆接触。采用扫描电镜(Scanning Electron Microscope, SEM)、透射 电镜(Transmission Electron Microscope, TEM)、能量分散谱仪(Energy Dispersive Spectrometer, EDS)和X射 线光电子能谱(X-ray Photoelectron Spectroscopy, XPS)观察了电极退火后金-半界面微结构的演化过程。结果表明,完全退火后的p电极 界面及金属层出现了明显的互扩散和界面反应现象;金-半界面上形成了存在良好共格/半共格关系的外延结 构。初始沉积的金属电极分层现象消失,形成了单一的电极结构。Ni向外扩散并与O发生反应,Au扩散至p-GaN 表面。在金-半接触界面上,Ga扩散至金属电极,造成界面附近的金属层中富集Au和Ga元素;Au和Ni明显扩散 至半导体表层,在金-半界面附近形成了Au、Ga和Ni富集现象。这些现象应该对于降低势垒高度和形成欧姆接触具有重要作用。

Abstract

The performance and structure of Ni/Au/Ni/Au contact of p electrode of AlGaN semiconductor are studied. Before annealing, the p electrode has obvious rectifying characteristics. After being annealed in air at 550℃ for 3 min and then being annealed in N2 at 750℃ for 30 s, a good ohmic contact is obtained. To uncover the ohmic contact forming mechanism of this structure, the Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM), Energy Dispersive Spectrometer (EDS) and X-ray Photoelectron Spectroscopy (XPS) are used to study the microstructure evolution of metal-semiconductor interface. The results show that the metal schemes change sharply and an interdiffusion and interface reaction happens during annealing. The as-deposited four-layer electrode is missing and is replaced by a single metal layer. A coherent or semi-coherent relationship is established at the interface. Thus, Ga diffuses to the metal electrode and Au and Ni diffuse into the upper layer of the semiconductor at the interface. Ga, Au and Ni are enriched across the interface. Ni has an outward diffusion and reacts with O. Au has an inward diffusion to the p-Ga surface. All of these phenomena are critical to the formation of the ohmic contact.

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中图分类号:TN23;TN304.2

DOI:10.3969/j.issn.1672-8785.2016.02.004

基金项目:中国科学院红外成像材料与器件重点实验室基金项目

收稿日期:2016-01-25

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作者单位    点击查看

祁昌亚:同济大学材料科学与工程学院, 上海 201804
胡正飞:同济大学材料科学与工程学院, 上海 201804
张燕:中国科学院上海技术物理研究所红外成像材料与器件重点实验室, 上海 200083
李向阳:中国科学院上海技术物理研究所红外成像材料与器件重点实验室, 上海 200083
张振:同济大学材料科学与工程学院, 上海 201804
童慧:同济大学材料科学与工程学院, 上海 201804

联系人作者:祁昌亚(huzhengf@tongji.edu.cn)

备注:祁昌亚(1990-),男,江苏连云港人,硕士研究生,主要研究方向为半导体器件的结构表征。

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引用该论文

QI Chang-ya,HU Zheng-fei,ZHANG Yan,LI Xiang-yang,ZHANG Zhen,TONG Hui. Research on Ni/Au/Ni/Au Ohmic Contact Structures of p-AlGaN Ultraviolet Detector[J]. INFRARED, 2016, 37(2): 22-28

祁昌亚,胡正飞,张燕,李向阳,张振,童慧. AlGaN紫外探测器p电极的Ni/Au/Ni/Au欧姆接触结构研究[J]. 红外, 2016, 37(2): 22-28

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