量子电子学报, 2016, 33 (2): 162, 网络出版: 2016-03-29  

一种新的SOI波导拉曼激光器模型及其应用

A novel model for SOI waveguide Raman lasers and its applications
作者单位
福州大学物理与信息工程学院微电子学系, 福建 福州 350108
摘要
通过考虑腔中的自发拉曼散射,提出一种新的绝缘体上硅(SOI)波导拉曼激光器物理模型。 仿真结果表明该模型能较好地描述其小信号输出特性,实现对该类激光器的快速分析、设计与优化。 利用模型对基于多种SOI波导的拉曼激光器进行分析,结果表明室温下只有采用拥有较大拉曼系数、较小线性 损耗和较短有效载流子寿命的SOI波导才能使拉曼激光器达到阈值。提出采用优化SOI波导截面几何尺寸的 方法来降低有效载流子寿命,进而提高整体拉曼增益。结果显示该方法可大幅提高SOI波导拉曼激光器的输出 功率和能量转换效率。
Abstract
A novel physical model was proposed to describe silicon-on-insulator (SOI) waveguide Raman lasers by considering the spontaneous Raman scattering effect in cavity. Numerical results show that the proposed model can well describe small-signal output characteristics of SOI waveguide Raman lasers and realize rapid analysis, design and improvement on them. The SOI waveguide Raman lasers were analyzed using the model. Results indicate that the key to reach the laser thresholds in room temperature is a SOI waveguide with large Raman coefficient, low loss, and short effective free carrier lifetime. By optimizing the transverse geometric size, a high overall Raman gain can be achieved in SOI waveguides with short effective carrier lifetime, which can increase the output power and conversion efficiency of SOI waveguide Raman lasers.

陈世恩, 王少昊. 一种新的SOI波导拉曼激光器模型及其应用[J]. 量子电子学报, 2016, 33(2): 162. CHEN Shien, WANG Shaohao. A novel model for SOI waveguide Raman lasers and its applications[J]. Chinese Journal of Quantum Electronics, 2016, 33(2): 162.

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