无论是在微机电系统（MEMS）还是集成电路（IC）领域, SU-8厚胶光刻已经成为制造高深宽比结构的主流工艺。为了取代昂贵而耗时的光刻实验, 一套能够良好预测显影形貌, 从而为优化光刻制造提供有效帮助的光刻仿真软件就成为必要而有价值的工具。基于严格电磁场波导法的理论, 给出一种针对SU-8光刻胶在紫外光下的三维光刻仿真模型。利用该模型, 能很好地预测显影后的光刻胶内光强分布和立体形貌。并完成了一系列仿真和实验结果来验证模型的有效性。仿真结果给出横截面光强分布图和显影立体形貌模拟图形, 并与相应的实验结果进行对照。结果验证了本文提出的仿真模型的正确性, 并且表明三维混合模型在保证精确性的前提下, 较之其他仿真算法运算速度更快。

SU-8 thick resist lithography has become the mainstream technology for structures with high aspect ratio in the micro-electro-mechanical system (MEMS) and integrated circuits (ICs). So as to replace expensive and time-consuming lithographic experiments, lithography simulation becomes an increasingly valuable tool for predicting results and optimizing manufacture process. A three-dimensional (3D) lithography simulation model is developed for the ultraviolet (UV) process of SU-8 resist. The model utilizes waveguide (WG) method based on rigorous electromagnetic field theory, which is more comprehensive than its two-dimension counterparts. Using this model, the light intensity distribution and morphology of photoresist after development process can be stereoscopically predicted. A series of simulations and experiments have been conducted to verify the validity of the model. The study is carried out on SU-8 under UV source with 365 nm and 2.6 mW/cm2. Simulation results are given by cross section image and stereogram combined with corresponding experimental outcome. The results confirm the validity of the simulation model and prove that the 3D hybrid model is faster than other methods and remains accurate.