用1064nm皮秒脉冲激光辐照PV型线阵HgCdTe探测器，随着激光能量的增大，探测单元出现了不同程度的损伤，发现了致损单元的反常响应现象，致损单元响区蓝移，对波长为1064nm的光响应灵敏度明显增强。结果表明：受损单元p型碲镉汞层出现汞析出现象后，受损光敏元碲镉汞材料组分和载流子浓度发生变化，pn结耗尽层宽度的变化导致pn结等效电阻变化，这是导致芯片损伤单元出现反常响应的主要因素。研究发现受损光敏元随着碲镉汞材料组分增大，碲镉汞材料能带禁带宽度增大，使探测器响区出现蓝移现象，这是损伤单元对波长为1064nm激光响应更加灵敏的主要原因。

PV linear array HgCdTe detector is radiated by 1064nm picoseconds pulse laser. With increasing laser energy, the detection unit presents various damages and it presents abnormal response of damage unit. It is found that the response range has blue shift of the damage unit, and the response sensitivity of damage unit on laser with wavelength of 1064nm increases. The results show that the damaged unit p-type HgCdTe layer presenting Hg precipitation will result in composition change of both damaged photosensitive HgCdTe material and carrier concentration. The pn equivalent resistance changes due to the change of depletion layer width, which are the main factors resulting in abnormal response of chip damage unit. It is found that damaged photosensitive element increases, and width of energy band and forbidden band of HgCdTe material increases as HgCdTe material composition, which makes detector response range have blue shift and it is also the main reason for the damage unit presenting more sensitive response to 1064nm laser.