发光学报, 2016, 37 (5): 578, 网络出版: 2016-05-11   

具有高开启/关断电流比的Al2O3/AlGaN/GaN金属氧化物半导体高电子迁移率晶体管

Al2O3/AlGaN/GaN MOS-HEMT with High On/Off Drain Current Ratio
赵勇兵 1,2,3,*张韵 1,2,3,4程哲 1,2,3黄宇亮 1,2,3,4张连 1,2,3刘志强 1,2,3伊晓燕 1,2,3王国宏 1,2,3李晋闽 1,2,3
作者单位
1 中国科学院半导体研究所 半导体照明研发中心, 北京 100083
2 半导体照明联合创新国家重点实验室, 北京 100083
3 北京市第三代半导体材料及应用技术工程中心, 北京 100083
4 中国科学院大学, 北京 100049
摘要
采用原子层淀积(ALD)方法,制备了Al2O3 为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT)。在栅压为-20 V时,MOS-HEMT的栅漏电比Schottky-gate HEMT的栅漏电低4个数量级以上。在栅压为+2 V时,Schottky-gate HEMT的栅漏电为191 μA;在栅压为+20 V时,MOS-HEMT的栅漏电仅为23.6 nA,比同样尺寸的Schottky-gate HEMT的栅漏电低将近7个数量级。AlGaN/GaN MOS-HEMT的栅压摆幅达到了±20 V。在栅压Vgs=0 V时, MOS-HEMT的饱和电流密度达到了646 mA/mm,相比Schottky-gate HEMT的饱和电流密度(277 mA/mm)提高了133%。栅漏间距为10 μm的AlGaN/GaN MOS-HEMT 器件在栅压为+3 V时的最大饱和输出电流达到680 mA/mm,特征导通电阻为1.47 mΩ·cm2。Schottky-gate HEMT的开启与关断电流比仅为105,MOS-HEMT的开启与关断电流比超过了109,超出了Schottky-gate HEMT器件4个数量级,原因是栅漏电的降低提高了MOS-HEMT的开启与关断电流比。在Vgs=-14 V时,栅漏间距为10 μm的AlGaN/GaN MOS-HEMT的关断击穿电压为640 V,关断泄露电流为27 μA/mm。
Abstract
This essay has reported the fabrication of a metal-oxide-semiconductor AlGaN/GaN high electron mobility transistor (MOS-HEMT) with an Al2O3 insulator layer which was deposited by atomic layer deposition (ALD) as the gate dielectric. The MOS-HEMT with a gate-drain distance of 10 μm exhibits a drive current density of 680 mA/mm at a gate-source bias (Vgs) of +3 V and a specific on-resistance of 1.47 mΩ·cm2. Under a negative gate bias of -20 V, the gate leakage current of the MOS HEMT is over four orders of magnitude, which is lower than that of the Schottky-gate HEMT. The off-state breakdown voltage is 640 V at drain leakage current of 27 μA/mm with Vgs =-14 V. The Schottky-gate HEMT leakage current is 191 μA at the gate bias of +2 V and the MOS HEMT leakage current is as low as 23.6 nA at the gate bias of +20 V, which is approximately seven orders of magnitude lower than that of the Schottky-gate HEMT with similar gate dimensions. The on/off drain-current ratio (Ion/Ioff) is over 109 for the MOS-HEMT.

赵勇兵, 张韵, 程哲, 黄宇亮, 张连, 刘志强, 伊晓燕, 王国宏, 李晋闽. 具有高开启/关断电流比的Al2O3/AlGaN/GaN金属氧化物半导体高电子迁移率晶体管[J]. 发光学报, 2016, 37(5): 578. ZHAO Yong-bing, ZHANG Yun, CHENG Zhe, HUANG Yu-liang, ZHANG Lian, LIU Zhi-qiang, YI Xiao-yan, WANG Guo-hong, LI Jin-min. Al2O3/AlGaN/GaN MOS-HEMT with High On/Off Drain Current Ratio[J]. Chinese Journal of Luminescence, 2016, 37(5): 578.

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