首先分析了量子效率计算的相关理论,然后分析利用红外中波 InAs/GaSbⅡ类超晶格材料进行光伏探测器研制,在对器件进行电学性能测试及光谱响应测试基础上,利用理论分析和测试数据计算出研制器件的实际电流响应率,再将实际电流响应率与理论分析的电流响应率相比,同时消除芯片表面 SiO2钝化层光学透过率的影响,计算出器件对红外波段 2～6.m辐射响应的量子效率最高可达 35%,达到了国外同类型器件响应的量子效率指标。本文的研究为评价 InAs/GaSbⅡ类超晶格红外探测器的光电转换性能提供了一种有效的方法。

In the paper, theory of calculation of quantum efficiency is analyzed first, then photovoltaic (PV) detectors are fabricated with medium wave (MW) InAs/GaSb typeⅡ super lattice is analyzed. Based on the test results of electrical parameters and spectral response of the photodiode, actual current responsivity is calculated. Then the actual current responsivity is divided by theoretical current responsivity, and the influence of optical transmittance of SiO2 passivation layer is considered simultaneously, so the quantum efficiency of InAs/GaSb type Ⅱ super lattice photodiode can be obtained. The peak quantum efficiency of photodiode can reach up to 35% between 2.m and 6.m, which is comparative to the results of photodiodes abroad with the similar type. The research provides an effective method to evaluate the photoelectric conversion performance of InAs/GaSb type Ⅱ superlattice detectors objectively.