光子学报, 2016, 45 (5): 0514001, 网络出版: 2016-06-06   

温度对高功率半导体激光器阵列“smile”的影响

Influence of Temperature on “Smile” in High Power Diode Laser Bars
作者单位
1 中国科学院西安光学精密机械研究所 瞬态光学与光子技术国家重点实验室, 西安 710119
2 西安炬光科技股份有限公司, 西安 710077
摘要
用数值模拟与实验测试相结合的方法, 研究了温度对“smile”的影响.利用有限元方法分别模拟计算了半导体激光器芯片键合及工作过程中激光器芯片中的热应力, 模拟中假设激光器芯片的弯曲仅由热应力引起;计算结果表明, 激光器芯片有源区的热应力随工作温度的升高而减小, 由热应力导致的芯片的弯曲随温度升高而减小.实验结果表明, 对于具有相同芯片、同一封装形式、同批次的器件, “smile”随温度的升高有增大或减小的趋势, 这与封装前裸芯片的弯曲形态及封装热应力的综合作用有关;若封装前裸芯片为相对平直的或凸的, 则封装后激光器的“smile”将随温度升高而减小;若封装前裸芯片为凹的, 封装后的激光器芯片仍为凹的, 则“smile”随温度升高而增大.
Abstract
By the numerical modeling and experimental test, the influence of temperature on “smile” was studied. By using the finite element method, the thermal stresses induced during bar bonding and operating process were simulated respectively. In simulations, it is assumed that the deformation of the laser bar is only caused by the thermal stress. The simulated results show that the thermal stress across the laser bar decreases with the increasing of heatsink temperature. As thus, the curve of the laser bar induced by packaging thermal stress will decrease with the increasing of the temperature. In this experiment, “smile” of five samples from the same wafer and batch was measured under different heatsink temperatures. Experimental results show that “smile” of the five samples increases or decreases as heatsink temperature increasing. The possible reason which is related with the combined action between the primitive bending shape of the bare bar and the mounting thermal stress. If the bare bar before packaging is flat or convex, “smile” of the diode laser bar will decrease as the heatsink temperature increasing. In addition, if the bare bar is concave and the laser bar is still concave after packaging, “smile” will increase with the increasing of heatsink temperature.

王淑娜, 张普, 熊玲玲, 聂志强, 吴的海, 刘兴胜. 温度对高功率半导体激光器阵列“smile”的影响[J]. 光子学报, 2016, 45(5): 0514001. WANG Shu-na, ZHANG Pu, XIONG Ling-ling, NIE Zhi-qiang, WU Di-hai, LIU Xing-sheng. Influence of Temperature on “Smile” in High Power Diode Laser Bars[J]. ACTA PHOTONICA SINICA, 2016, 45(5): 0514001.

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