提出了一种改进的集成雪崩光电二极管器件结构, 由硅和锗材料的雪崩光电二极管结构集成, 分别包含吸收区、电荷区和倍增区结构。该改进雪崩光电二极管对光线波长的探测范围扩展到200~1 400 nm。对雪崩光电二极管的关键参数, 如器件内电场分布、暗电流、光电流、增益和光响应等进行了分析。仿真结果表明改进雪崩光电二极管的击穿电压为145 V。当阴极偏置电压为140 V时, 该器件对900 nm波长光线的峰值响应可以达到22 A/W。在器件击穿之前, 400 nm波长光线的电流增益可以对达到50。对改进雪崩光电二极管器件的工艺流程也进行了讨论。

An advanced avalanche photodiode(APD) was put forword which was integrated by the Si Separate Absorption, Charge, Multiplication(SACM) and Ge SACM APDs. This advanced APD has enlarged the detected wavelength range to 200-1 400 nm. Furthermore, the key parameters which were used to characterize the APD performance, such as the electric field distribution, the dark current and photocurrent, the gain, and the sensitivity of the APD were researched. The simulation results demonstrated that the breakdown voltage of the advanced APD is 145 V, the peak response is 22 A/W at 900 nm wavelength as cathode is 140 V, and the current gain of the advanced APD could get 50 at 400 nm wavelength before breakdown. The fabrication process was also discussed.