报道了激射波长为2.1 μm 的GaInSb/AlGaAsSb双量子阱激光器。通过优化外延结构设计和欧姆接触, 无镀膜的宽条激光器达到了9.8%的峰值功率转换效率, 这比原来的值提高了1.5倍, 室温下得到了615 mW的连续激射功率输出和1.5 W的脉冲激射功率输出。这些激光器的阈值电流密度低至126 A/cm2, 斜率效率高达0.3 W/A。通过测试不同腔长的激光器, 测得内损耗和内量子效率分别为6 cm-1和75.5%, 均比原有器件有很大提升。激光器在连续工作3 000 h后, 功率没有明显下降。

2.1 μm GaInSb/AlGaAsSb double quantum well lasers were reported. With optimization of epitaxial design and ohmic contact, these uncoated broad-area lasers exhibited a maximum power conversion efficiency of 9.8% which was 1.5 times greater than previous value, a room temperature continuous wave output power of 615 mW and a pulsed wave output power of 1.5 W were achieved. The threshold current density of these lasers was as low as 126 A/cm2, and the slope efficiency was as high as 0.3 W/A. By testing lasers with different cavity lengths, the internal loss and the internal quantum efficiency were measured as 6 cm-1 and 75.5%, respectively, which were all improved compared with previous device. The output power of laser diode operated in CW mode shows no apparent degradation after 3 000 h.