根据严格耦合波理论和介质平板波导理论, 利用Comsol Multiphysic软件仿真设计了基于单晶n-ZnO/p-AlGaN LED(发光二极管)结构的DFB(分布反馈)半导体激光器的光栅结构。针对LED结构加电压后发射近紫外光, 分析了二维电场模式分布图, 得出单纵模传输随着光栅不同参量的变化情况。分析表明, 在4 V正向偏置电压下, 当占空比为50%、光栅周期为109.2 nm、光栅高度为69.8 nm时, 光谱线宽窄、单模选择性好, 电场模达5.877 4×107 V/m。为电泵浦DFB半导体激光器的设计与加工提供了一定的基础。

According to the rigorous coupled-wave theory and medium slab waveguide theory, the structure of Distributed Feed Back (DFB) semiconductor laser based on single-crystal n-ZnO/p-AlGaN Light Emitting Diode (LED) structure is simulated and designed by the Comsol Multiphysic software. The distribution of a two-dimensional electric mode is analyzed with near-ultraviolet light emission at the applied voltage of 4 V on the n-ZnO/p-AlGaN LED structure. The variation of the single longitudinal mode with different parameters of the grating is obtained. Also, the simulation results show that the electric field mode reached 5.877 4×107 V/m with narrow spectral linewidth and preferable mode selectivity under the condition of the duty ratio of 50%, grating period of 109.2 nm and the grating height of 69.8 nm. The results in the paper provide a foundation for the design and processing of electrically pumped DFB semiconductor laser.