强激光与粒子束, 2016, 28 (8): 28084004, 网络出版: 2016-07-26
以太网芯片重离子单粒子效应试验
Experimental research of heavy-ion single-event effect on Ethernet chip
摘要
为评估和研究工业以太网芯片KSZ8851-16MLLJ在空间环境中的适应性,利用重离子源对芯片进行了单粒子试验。根据以太网芯片的结构和功能制订了单粒子实验方案,得出了实验数据,并对实验数据进行了整理和研究。实验和研究表明:工业以太网芯片KSZ8851-16MLLJ具有一定的抗单粒子辐射能力;在不同网络传输条件下,发生单粒子翻转的机率也不相同;在持续的单粒子辐射下,以太网芯片会发生电流阶跃,第二次电流阶跃时产生单粒子锁定,在工程应用中可以利用电流阶跃监测芯片的辐射水平。
Abstract
A single-event experiment is carried out for the industrial Ethernet chip KSZ8851-16MLLJ by using a heavy ion source in order to evaluate and study the adaptability of the chip in the space environment. The single-event experimental plan is formulated according to the structure and function of the Ethernet chip to get experimental data which will be arranged and researched. Some results are shown about the experiment and research as follows. The chip has some anti-single-event radiation ability, the probability of single-event upset is different under different network transmission conditions, the chip will produce a current step in the continuous single-event radiation and the single event is locked when the second current step happens, and thus the radiation level of the chip is monitored by the current step in engineering application.
夏加高, 李文新, 权昕, 李泰国, 赵彦荣. 以太网芯片重离子单粒子效应试验[J]. 强激光与粒子束, 2016, 28(8): 28084004. Xia Jiagao, Li Wenxin, Quan Xin, Li Taiguo, Zhao Yanrong. Experimental research of heavy-ion single-event effect on Ethernet chip[J]. High Power Laser and Particle Beams, 2016, 28(8): 28084004.