红外与毫米波学报, 2016, 35 (3): 263, 网络出版: 2016-07-26
用于超高速数字集成电路的0.5um InP/InGaAs双异质结晶体管
0.5 μm InP/InGaAs DHBT for ultra high speed digital integrated circuit
摘要
报道了用于超高速数字集成电路的0.5 μm发射级线宽的InP/InGaAs DBHT器件，及其100 GHz的静态分频器，其工作频率达到国内领先.并详细分析了器件CB结电容对影响高速数字应用的影响，其中Ccb/Ic达到0.4 ps/V，揭示其静态分频器具有工作在150 GHz以上的潜力.
Abstract
0.5μm InP/InGaAs DHBT with 350/533 GHz ft/fmax and two layers of interconnecting technology were developed for ultra high speed digital integrated circuit (IC) application. A static divide-by-2 frequency divider operating at 100 GHz was demonstrated. As the important parameters of gate delay, base-collector capacitance Ccb and Ccb/IC were analyzed. The value of Ccb/IC as low as 0.4 ps/V was achieved, indicating that frequency divider operating above 150 GHz could be potentially realized.
牛斌, 程伟, 张有涛, 王元, 陆海燕, 常龙, 谢俊领. 用于超高速数字集成电路的0.5um InP/InGaAs双异质结晶体管[J]. 红外与毫米波学报, 2016, 35(3): 263. NIU Bin, CHENG Wei, ZHANG You-Tao, WANG Yuan, LU Hai-Yan, CHANG Long, XIE Jun-Ling. 0.5 μm InP/InGaAs DHBT for ultra high speed digital integrated circuit[J]. Journal of Infrared and Millimeter Waves, 2016, 35(3): 263.
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