介绍了我们基于InP衬底采用无锑材料体系开展的2~3 μm波段激光器及光电探测器方面的持续探索，包括采用赝配三角形量子阱方案的2~2.5 μm波段I型InGaAs多量子阱激光器、采用虚拟衬底异变方案的2.5~3 μm波段I型InAs多量子阱激光器、以及截止波长大于1.7 μm的高In组分InGaAs光电探测器等，这些器件结构均采用GSMBE方法生长，其中2.5 μm以下波长的激光器已实现了高于室温的CW激射并获实际应用，2.9 μm波长的激光器也在热电制冷温度下实现了脉冲激射，含超晶格电子阻挡势垒层的截止波长2.6 μm InGaAs光电探测器暗电流显著减小，此类光电探测器材料已用于航天遥感焦平面组件的研制.

The development of InP based antimony free 2~3 μm band lasers and photodetectors in our laboratory are introduced, including the 2~2.5 μm band type I InGaAs MQW lasers under pseudomorphic triangle well scheme, 2.5~3.0 μm band type I InAs MQW lasers under metamorphic strain compensation well scheme, as well as InGaAs photodetectors with high indium contents with cut-off wavelength larger than 1.7 μm. All device structures were grown using gas source MBE method. CW operation above room temperature has been reached for the lasers with wavelength less than 2.5 μm, which have gained actual applications. Pulse operation of 2.9 μm lasers at TE temperature also has been reached. The dark current of 2.6 μm InGaAs photodetectors has been decreased notably with the inserting of supperlattice electron barriers. These types of epitaxial materials have been used to the development of FPA modules for space remote sensing applications.