红外与毫米波学报, 2016, 35 (3): 326, 网络出版: 2016-07-26
基于DOE策略的多层薄膜残余应力对太赫兹微桥形变的影响
AOrthogonal design of multilayer thin film residual stress impact on the THz micro bridge deformation
太赫兹微测热辐射计 力学仿真 残余应力 正交实验设计 THz microbolometer mechanical simulation residual stress orthogonal design of experiment
摘要
桥面多层膜系残余应力匹配是消除太赫兹微测辐射热计微桥结构形变的重要手段.仿真建立了像元尺寸为35 μm×35 μm微桥单元有限元模型.基于实验设计(DOE)正交法，采用IntelliSuite软件进行应力仿真，获得支撑层、钝化层、电极层、热敏层、吸收层应力分别为+200 Mpa、+200 Mpa、+200 Mpa、0 Mpa、-400 Mpa的最佳应力组合，最小微桥单元形变(0.0385 μm).通过各膜层残余应力控制，制备出基于该优化微桥单元结构的320×240太赫兹焦平面阵列，获得与仿真结果相符的极小形变微桥.
Abstract
Residual stress matching is critical for elimination of deformation for terahertz (THz) microbolometer with micro-bridge structure. Finite element simulation model of micro-bridge was built with a pixel size of 35 μm×35 μm. Intellisuite was used for mechanics simulation based on orthogonal experimental design. A minimum deformation of 0.0385 μm was obtained with an optimized stress combination when the residual stresses of support layer, passivation layer, electrode layer, sensitive layer and absorption layer were +200 MPa, +200 MPa, +200 MPa, 0 MPa and -400 MPa, respectively. 320×240 THz focal plane array was fabricated with the optimized stress combination. A minimal deformation was achieved, which agreed well with the simulation.
郑兴, 刘子骥, 顾德恩, 苟君, 马家锋, 黎威志, 吴志明. 基于DOE策略的多层薄膜残余应力对太赫兹微桥形变的影响[J]. 红外与毫米波学报, 2016, 35(3): 326. ZHENG Xing, LIU Zi-Ji, GU De-En, GOU Jun, MA Jia-Feng, LI Wei-Zhi, WU Zhi-Ming. AOrthogonal design of multilayer thin film residual stress impact on the THz micro bridge deformation[J]. Journal of Infrared and Millimeter Waves, 2016, 35(3): 326.
PDF全文
