发光学报, 2016, 37 (7): 809, 网络出版: 2016-07-26
1 310 nm垂直腔面发射激光器芯片制备技术的研究进展
Research Progress of 1 310 nm VCSELs Chip Technology
摘要
垂直腔面发射激光器(VCSELs)在光纤通讯领域有着广泛的应用前景, 国际上对VCSELs需求逐年增加, 而国内目前VCSELs的产业化尚属空白。本文从两方面着手综述1 310 nm VCSELs制备方法。将可以制备出1 310 nm VCSELs的4种材料, 从理论、制备、量产时需要考虑的因素等方面进行较为全面的汇总分析; 同时对两种主流的制备方法从工艺步骤分析其在产业化方面的优势与不足。
Abstract
The vertical-cavity surface-emitting laser(VCSEL) is becoming a key device in the gigabit, local-area networks(LANs) and optical interconnets. Its volumn is increasing ever year in the world. However, there is no company to produce this promising device in China. In this paper, we review its material system properties and fabrication technology of 1 310 nm long-wavelength band and analyse the advantage and disadvantage from production. Lastly, we give a conclusion which method is better choice in the industrlization.
刘丽杰, 吴远大, 王玥, 安俊明, 胡雄伟, 王佐. 1 310 nm垂直腔面发射激光器芯片制备技术的研究进展[J]. 发光学报, 2016, 37(7): 809. LIU Li-jie, WU Yuan-da, WANG Yue, AN Jun-ming, HU Xiong-wei, WANG Zuo. Research Progress of 1 310 nm VCSELs Chip Technology[J]. Chinese Journal of Luminescence, 2016, 37(7): 809.