针对微电子机械系统(MEMS)湿法槽刻蚀技术,基于硅材料各向异性腐蚀特性研究了硅基周期槽的湿法刻蚀工艺,得出了优化的光刻参数。通过对比实验详细分析了搅拌在腐蚀过程中起到的重要作用,实验结果显示,搅拌可以增加腐蚀溶液的流通性,使硅表面不易产生气泡形成“伪掩膜”阻碍反应的进行,从而制备出表面光滑平整的周期槽结构。同时,在搅拌的条件下对槽深和腐蚀时间的关系也做出了相应的分析。为硅微机械加工技术的进一步研究提供了参考。

Due to the importance of micro-electro-mechanical system(MEMS)wet etching technique,the fabrication of periodic groove structure based on anisotropic etching are proposed in this paper.And the optimal lithography parameters are obtained by several experiments.On the basis of this,we observe that the stirring plays an important role in the wet etching technique.Stirring can increase the liquidity of the corrosion solution so that the silicon surface is not easy to generate bubbles to form "false mask",which can stop the reaction of the silicon and the solution.Then the surface of the periodic groove structure is very smooth.Furthermore,the relationship between the groove depth and the etching time is also analyzed in this paper.This research is of great significance for silicon micro mechanical processing technology.