碲锌镉（CdZnTe）是制备X 射线、?射线探测器的一种理想半导体材料。CdZnTe 欧姆接触电极是制备CdZnTe 核辐射探测器的关键技术之一。表面加工状态是影响欧姆接触性能的重要因素，文中研究了4 种表面处理工艺对Au-CdZnTe 电极接触性能的影响。研究发现对晶片表面进行溴甲醇腐蚀处理和机械化学抛光均有助于提升Au-CdZnTe 电极欧姆接触性能。对晶片进行机械化学抛光后再进行溴甲醇腐蚀处理，使用这种晶片所制备的电极具有更加优良的综合电学性能。

CdZnTe is a promising material to make the detector of X rays or ? rays. The preparation of ohmic contact of CdZnTe plays an important role in the device performance. As the surface quality is very important to the ohmic contact characteristic, the effect of four different surface treatments on the electrode contact performance of CdZnTe was studied in this paper. The results show that both etching treatment and chemical-mechanical polishing can improve the ohmic contact characteristic. The electrode which is made of the wafer polished chemically-mechanically and then etched by Br2-MeOHaqueous exhibits excellent electric performance.