红外与激光工程, 2016, 45 (7): 0720004, 网络出版: 2016-08-18   

最大振荡频率640 GHz的70 nm栅长InAs PHEMTs器件

70 nm gate-length InAs PHEMTs with maximum oscillation frequency of 640 GHz
作者单位
河北半导体所专用集成电路国家级重点实验室, 河北 石家庄 050051
摘要
由于高的电子迁移率和二维电子气浓度, InP基赝配高电子迁移率晶体管(PHEMTs)器件成为制作太赫兹器件最有前途的三端器件之一。为提高器件的工作频率, 采用InAs复合沟道, 使得二维电子气的电子迁移率达到13 000 cm2/(V·s)。成功研制出70 nm栅长的InP基赝配高电子迁移率晶体管, 器件采用双指, 总栅宽为30 μm, 源漏间距为2 μm。为降低器件的寄生电容, 设计T型栅的栅根高度达到210 nm。器件的最大漏端电流为1 440 mA/mm(VGS=0.4 V), 最大峰值跨导为2 230 mS/mm。截止频率fT和最大振荡频率fmax分别为280 GHz和640 GHz。这些性能显示该器件适于毫米波和太赫兹波应用。
Abstract
Because of the high electron mobility and two-dimensional electron gas concentration, InP based pseudomorphic high electron mobility transistors(PHEMTs) become one of the most promising three-terminal devices which can operate in terahertz. The InAs composite channel was used to improve the operating frequency of the devices. The two-dimensional electron gas(2DEG) showed a mobility of 13 000 cm2/(V·s) at room temperature. 70 nm gate-length InAs/In0.53Ga0.47As InP-based PHEMTs were successfully fabricated with two fingers 30 μm total gate width and source-drain space of 2 μm. The T-shaped gate with a stem height of 210 nm was fabricated to minimize parasitic capacitance. The fabricated devices exhibited a maximum drain current density of 1 440 mA/mm(VGS=0.4 V) and a maximum transconductance of 2 230 mS/mm. The current gain cutoff frequency fT and the maximum oscillation frequency fmax were 280 and 640 GHz, respectively. These performances make the device well-suited for millimeter wave or terahertz wave applications.

张立森, 邢东, 徐鹏, 梁士雄, 王俊龙, 王元刚, 杨大宝, 冯志红. 最大振荡频率640 GHz的70 nm栅长InAs PHEMTs器件[J]. 红外与激光工程, 2016, 45(7): 0720004. Zhang Lisen, Xing Dong, Xu Peng, Liang Shixiong, Wang Junlong, Wang Yuangang, Yang Dabao, Feng Zhihong. 70 nm gate-length InAs PHEMTs with maximum oscillation frequency of 640 GHz[J]. Infrared and Laser Engineering, 2016, 45(7): 0720004.

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