发光学报, 2016, 37 (8): 967, 网络出版: 2016-08-29  

纳米柱高度对GaN基绿光LED光致发光谱的影响

Effects of The Height of Nanorod Structure on The Photoluminescence Spectra of GaN-based Green LED
作者单位
1 华南理工大学广东省光电工程技术研究开发中心 物理与光电学院, 广东 广州 510640
2 广州现代产业技术研究院, 广东 广州 511458
摘要
纳米柱结构是释放高In组分InGaN/GaN绿光LED量子阱层应变的有效方法。本文采用自组装的聚苯乙烯微球掩模、感应耦合等离子体干法刻蚀和KOH溶液的湿法腐蚀, 在GaN基绿光LED外延片上制备了3种高度的纳米柱结构, 通过扫描电子显微镜观察纳米柱结构的形貌, 并测试了常温和10 K低温时的光致发光谱(PL)。结果表明: 应变释放对压电场的影响显著, 使得纳米柱结构样品的内量子效率(IQE)提高, PL谱峰值波长蓝移; 应变在量子阱中的不均匀分布还使得PL谱半高全宽(FWHM)展宽。与普通平面结构相比, 高度为747 nm的纳米柱结构可使得IQE提升917%, PL谱峰值波长蓝移18 nm、FWHM展宽7 nm。另外, 纳米柱结构样品的有源区有效面积减小可使得PL谱FWHM减小。
Abstract
Nanorod structure is an effective method to release the strain in multiple quantum wells of InGaN/GaN green LED with high In component. In this paper, the natural lithography with self-assembled polystyrene microspheres, inductively coupled plasma dry etching and wet-etching using KOH aqueous solution were used to fabricate the nanorod structure with three heights in GaN-based green LED epitaxial wafers. The morphology was observed by scanning electron microscope, and the photoluminescence (PL) spectra at room temperature and 10 K low temperature were characterized. It is shown that the strain relaxation significantly affect the piezoelectric field, thereby the nanorod structure leads to a promotion of the wafers’ internal quantum efficiency (IQE) and blue-shift of the peak wavelengths of PL spectra, and the nonuniform distribution of the strain causes a broadening of the FWHM (full width at half maximum). Compared with the ordinary planar structure, the nanorod structure with the height of 747 nm induces an enhancement of 917% for the IQE, a blue-shift of 18 nm for the peak wavelengths of PL spectrum, and a broadening of 7 nm for the FWHM. The results also indicate that the decreasing of effective active area of samples with nanorod structure may reduce the FWHM.

黄华茂, 黄江柱, 胡晓龙, 王洪. 纳米柱高度对GaN基绿光LED光致发光谱的影响[J]. 发光学报, 2016, 37(8): 967. HUANG Hua-mao, HUANG Jiang-zhu, HU Xiao-long, WANG Hong. Effects of The Height of Nanorod Structure on The Photoluminescence Spectra of GaN-based Green LED[J]. Chinese Journal of Luminescence, 2016, 37(8): 967.

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