实验验证了室温下二维氧化物下包层非对称平板三角晶格光子晶体渐变型双异构微腔对绝缘体上硅(SOI)基片上铒氧共掺硅材料的显著发光增强作用。在波长为488nm、功率为15mW激光激发下, 微腔的光致发光(PL)谱呈现出一个位于1557.93nm通信波长处的尖锐狭窄的发光峰, 相比于无光子晶体区域, 发光增强了约13倍。谐振峰随光泵浦功率增加, 发生明显的红移, Q值逐渐下降, 在1.5mW光泵浦功率下, Q值达6655。微腔谐振波长与光子晶体晶格周期之间呈线性正比关系, 通过调整晶格周期, 实现了掺铒硅发光增强峰波长的灵活可控。

It is experimentally demonstrated efficient enhancement of luminescence from two-dimensional (2D) oxide-cladding asymmetric slab hexagonal photonic crystal (PC) gradient double-heterostructure microcavity with Er/O co-implanted silicon (Si) as light emitters on silicon-on-insulator (SOI) wafer at room temperature. A single sharp resonant peak with 1557.93nm communication wavelength dominates the photoluminescence (PL) spectrum and 13-fold PL intensity enhancement is obtained compared to the case of identically implanted SOI wafer at 488nm wavelength laser pumping with 15mW power. The obvious red-shift and degraded Q-factor of resonant peak are present with the pumping power increasing, and the measured Q-factor of 6655 has been achieved at the pumping power of 1.5mW. The resonant wavelength is observed linearly proportional to the lattice period of PC, which indicates an efficient way to tune the wavelength of enhanced luminescence of Er-doped Si by adjusting the lattice period.