采用高温固相法合成了可被紫外光激发的Ba2SiO4∶Gd3+,Tb3+荧光粉。考察了激活离子掺杂量等因素对发光性能的影响。通过X射线衍射(XRD)、荧光(FL)光谱和荧光寿命曲线对所合成样品的结构和发光性能进行表征, 研究了Gd3+和Tb3+的特征吸收波长激发Ba2SiO4∶Gd3+,Tb3+的发光性能。在275 nm(Gd3+: 8S7/2→6IJ)激发下, 检测到了Tb3+的特征发射。通过对比不同Tb3+掺杂量下Gd3+:6P7/2能级的衰减曲线, 发现随着Tb3+掺杂浓度的增加, 该能级的荧光寿命不断缩短, 表明样品中存在Gd3+→Tb3+的能量传递, 传递方式为无辐射共振能量传递。在244 nm(Tb3+: 4f8→4f75d1)激发下, Gd3+的掺入使得Tb3+的5D3能级的发射逐渐减弱, 5D4能级的发射增强。Gd3+的掺入使得544 nm(5D4→7F5)处的特征发射增强了59%~128%, 结合荧光衰减曲线得出Gd3+的掺入对Tb3+能级中5D3→5D4与7F6→7F0交叉驰豫有促进作用。

A series of Ba2SiO4∶Gd3+,Tb3+ green phosphors were synthesized by solid state reaction. The influence of the factors such as the amount of ion doping on the luminescence properties was investigated. Their structure and luminescence properties were characterized by X-ray diffraction (XRD) analysis, fluorescence spectrometry (FL), and decay curves. The spectroscopic properties of Ba2SiO4∶Gd3+,Tb3+ under the excitation of the characteristic absorption wavelength of Gd3+ and Tb3+ were investigated. The emission of Tb3+ was observed under 275 nm(Gd3+: 8S7/2→6IJ) excitation. By comparing Gd3+: 6P7/2 energy decay curve with different Tb3+ doping amount, it is found that the level of fluorescence continuously shorten the service life with the increasing of Tb3+ concentration, indicating the occurrence of energy transfer from Gd3+ to Tb3+ with the mode of nonradiative resonance transfer. Under the excitation of 244 nm (Tb3+: 4f8→4f75d1), the emission intensity of 5D3 level decreases, but the 5D4 level increases with the doping of Gd3+. The emission intensity at 544 nm (5D4→7F5) increases 59%~128% with the doping of Gd3+. Combining with the fluorescence decay curves, it is found that the doping of Gd3+ can promote the cross relaxation of 5D3→5D4 and 7F6→7F0 in Tb3+.