为了满足超辐射发光管的短波长应用, 采用InAlGaAs/AlGaAs量子点有源区和干法刻蚀工艺制备了短波长弯曲波导超辐射发光管。在1.6 A脉冲电流注入下, 器件峰值输出功率为29 mW, 中心波长为880 nm, 光谱半高宽为20.3 nm。比较了干法刻蚀工艺和湿法腐蚀工艺对超辐射发光管器件性能的影响。在1.6 A脉冲电流注入下, 湿法腐蚀制备的器件峰值输出功率仅为7 mW。与湿法腐蚀相比, 干法刻蚀可以精确控制波导形状和参数, 降低波导损耗, 有效增大器件输出功率。

In order to meet the short-wavelength applications of the superluminescent diodes, a bent-waveguide superluminescent diode was fabricated by using InAlGaAs/AlGaAs quantum-dot active region and dry etching process. The peak output power up to 29 mW with the wavelength centered at 880 nm and the full-width at half-maximum of 20.3 nm were obtained. Also the influences of wet etching and dry etching on the device properties were compared. At 1.6 A pulsed current injection, the peak output power of the device fabricated by wet etching is only 7 mW. Compared with wet etching, dry etching can precisely control the shape and parameters of the waveguide, leading to smaller waveguide loss and higher output power.