发光学报, 2016, 37 (6): 758, 网络出版: 2016-09-12   

基于侧向PN结和交趾型PN结的硅基Mach-Zehnder调制器的二阶谐波失真特性

Second Harmonic Distortion Comparison of Mach-Zehnder Silicon Modulators Based on Lateral and Interdigitated PN Junctions
作者单位
1 浙江大学城市学院 信息与电气工程学院, 浙江 杭州310015
2 浙江大学 信息与电子工程学院, 浙江 杭州310027
摘要
高线性度的电光调制器是构建微波光子链路的核心器件。硅光子调制器利用PN结的载流子色散效应实现微波信号对光波的调制, 基于不同结构PN结的调制器有不同的非线性特性。本文采用二阶无杂散动态范围表征二阶谐波失真度, 实验研究了采用侧向PN结和交趾型PN结所构成的Mach-Zehnder(MZ)调制器的二阶谐波失真特性。基于侧向PN结和交趾型PN结的MZ调制器的二阶无杂散动态范围为分别为85.11 dB·Hz1/2、78.44 dB·Hz1/2, 表明基于侧向PN结的MZ调制器具有更好的线性度。
Abstract
Electro-optic modulators with high linearity are core devices of microwave photonic link. The modulation mechanism of the silicon optical modulator is based on the carrier dispersion effect which is nonlinear and its nonlinearity is highly related to the structure of PN junction. In this paper, the second-order spurious-free dynamic range (SFDR2) is introduced to characterize the second harmonic distortion (SHD) of modulators. The SHD of silicon optical Mach-Zehnder modulator (MZM) based on two most widely used doping patterns, i.e., the lateral and the interdigitated PN junctions are compared with each other. The experimental results show that the lateral PN junction and interdigitated PN junction based MZMs have SFDR2 of 85.11 dB·Hz1/2 and 78.44 dB·Hz1/2, respectively. The lateral PN junction based MZM has a better linearity.

戚伟, 邵海峰, 余辉, 江晓清. 基于侧向PN结和交趾型PN结的硅基Mach-Zehnder调制器的二阶谐波失真特性[J]. 发光学报, 2016, 37(6): 758. QI Wei, SHAO Hai-feng, YU Hui, JIANG Xiao-qing. Second Harmonic Distortion Comparison of Mach-Zehnder Silicon Modulators Based on Lateral and Interdigitated PN Junctions[J]. Chinese Journal of Luminescence, 2016, 37(6): 758.

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