基于Landau-de Gennes理论, 利用松弛迭代的方法, 研究了包含-1/2向错线的混合排列（HAN）液晶盒中, 平行于向错线的电场所诱导的结构转变。结果表明, 盒厚固定时, 电场诱导五种结构转变过程; 电场固定时, 盒厚变化产生三类结构转变方式。力曲线上的极小值确定了液晶系统发生结构转变的临界盒厚。

Based on the Landau-de Gennes theory, with the relaxation iterative method, we investigated the electric field-induced structure transition in a nanoconfined HAN cell with -1/2 topological defect, where the electric field is parallel to the disclination line. Our results show that with fixed cell gaps, five new structure transition processes are induced by electric field; while cell gap variation leads to three transition modes for an applied electric field. The critical value of cell gap corresponding to the structure transition is characterized by the local minimum in the force curve.