随着微通道板的不断发展与完善, 通过改善传统工艺提升其性能越来越困难, 开发提升微通道板性能的新技术迫在眉睫。纳米薄膜材料的发展及其制备技术的成熟为微通道板的发展提供了契机, 利用原子层沉积技术在通道内壁沉积一层氧化铝纳米薄膜, 作为二次电子发射功能层, 可以增强通道内壁的二次电子发射能力, 从而提升微通道板的增益性能。通过优化原子层沉积工艺参数可以在微通道板的通道内壁沉积厚度均匀的氧化铝薄膜。研究结果表明, 微通道板增益随沉积氧化铝厚度的变化而变化, 在氧化铝厚度为60 cycles时, 施加偏压800 V时增益可达56 000, 约为正常微通道板增益的12倍。

With continuous development and improvement of the microchannel plate production technology, it becomes more and more difficult to enhance its performance by improving traditional crafts. New technologies and new crafts of microchannel plate need to be developed urgently. Development of nano film material and mature preparation technology provide an excellent opportunity for the development of microchannel plate. The channel inner walls are deposited with layer of alumina nano film as secondary electron emission layer by using atomic layer deposition technology, it can increase the secondary electron emission coefficient of channel walls as well as the gain of microchannel plate. The alumina nano films can be deposited in the channel inner walls uniformly with optimized process parameters. The results show that microchannel plate gain changes with alumina thickness, especially it will achieve a high gain up to 56 000 which is about 12 times the gain of normal microchannel plate when the bias voltage is 800 V and the alumina thickness is 60 cycles.