Chinese Optics Letters, 2016, 14 (11): 111402, Published Online: Aug. 2, 2018  

Low threshold high stability passively mode-locked laser performance of a disordered crystal: Nd3+:Gd0.5Y2.5Al5O12

Author Affiliations
1 Advanced Research Center for Optics, Shandong University, Jinan 250100, China
2 School of Information Science & Engineering, Shandong University, Jinan 250100, China
3 Jiangsu Key Laboratory of Advanced Laser Material and Device, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
4 School of Physics Science and Engineering, Institute for Advance Study, Tongji University, Shanghai 200092, China
5 College of Science, China University of Petroleum (East China), Qingdao 266580, China
Abstract
A stable passively mode-locked laser of Nd3+:Gd0.5Y2.5Al5O12 (Nd:GYAG) disordered crystal is experimentally investigated both using Z-type and W-type cavities with a semiconductor saturable absorbed mirror. The continuous-wave mode-locked threshold of the absorbed pump power is just 1.8 W. The maximum average output power is 210 mW, which is obtained at the absorbed pump power of 2.3 W. The pulse width is measured to be 11.1 ps assuming a Gaussian shape.

Chao Feng, Zhaojun Liu, Zhenhua Cong, Xiaodong Xu, Jun Xu, Han Rao, Fen Bai, Ping Li, 青圃 王, Jiaxiong Fang. Low threshold high stability passively mode-locked laser performance of a disordered crystal: Nd3+:Gd0.5Y2.5Al5O12[J]. Chinese Optics Letters, 2016, 14(11): 111402.

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