室温下用射频磁控溅射法在玻璃和p型单晶硅衬底上沉积ITO薄膜, 并对其进行不同温度的退火处理。采用XRD衍射仪测试薄膜结晶性, 用紫外-可见分光光度计和霍尔效应测试试样光电性能, 用吉时利2400表测试ITO/p-Si接触的I-V曲线, 用线性传输线模型测试比接触电阻。研究结果表明: 室温下沉积的ITO薄膜与p-Si形成欧姆接触, 但比接触电阻较大。退火处理可以进一步优化接触性能, 200℃退火后试样保持欧姆接触且比接触电阻下降为8.8×10-3Ω·cm2。随着退火温度进一步升高到300℃, 比接触电阻达到最低值2.8×10-3Ω·cm2, 但接触性能变为非线性。

ITO transparent conductive films were deposited on glass and p-type silicon substrates by RF magnetron sputtering at room temperature, and were annealed at different temperatures after deposition. XRD was used to analyze their crystallization, and the electrical and optical performances of the samples were characterized by Hall effect testing instrument and the UV-VIS spectrometer respectively. A keithley 2400 meter was applied to measure the I-V curves of the contacts between ITO films and p-type silicon. The specific contact resistance of the contacts were tested by a linear transmission line model. The results show that the ITO films deposited at room temperature without annealing exhibit Ohmic contact with p-type silicon, but the specific contact resistance is large. The contact property is optimized after the thermal annealing. The contact keeps an Ohmic contact after annealing at 200℃, and the specific contact resistance decreases to 8.8×10-3Ω·cm2. The contact presents a lowest specific contact resistance of 2.8×10-3Ω·cm2 after thermal annealing at 300℃. However, I-V curve of the contact becomes no-linear.